High Speed Hybrid Modules Combining High Speed IGBTs with SIC-SBDs

摘要

In recent years, there has been greater demand to reduce emissions of greenhouse gases such as CO_2 as a measure to suppress global warming. In order to achieve this, it has become necessary to promote a higher degree of energy savings in a variety of fields. Innovation of components such as power devices, circuits, and control mechanisms is required to advance energy savings in power conversion equipment typified by inverters, and it has become an important goal to achieve even less power dissipation in power devices. Moreover, in order to realize further miniaturization and better efficiency in power conversion equipment, an increasing number of applications are performing power conversion at high frequencies, and there is greater demand for high-speed low-loss switching. It is against this background that Fuji Electric has developed and commercialized high-speed hybrid modules that incorporate a high-speed insulated gate bipolar transistors (IGBT) that can operate at a switching speed of 20 kHz or higher and Schottky barrier diodes (SiC-SBD) into a conventional package (see Table 1).