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首页> 外文期刊>Cal Lab: The international journal of metrology >Pressure-Indicating Film Characterization of Wafer-to-Wafer Bonding
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Pressure-Indicating Film Characterization of Wafer-to-Wafer Bonding

机译:晶圆间键合的压力指示膜特性

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摘要

Wafer-to-wafer bonding has become an enabling semiconductor technology in industries, such as 3D packaging, MEMS, MOEMS, and SOI. In a typical wafer bonding process, two flat substrates are permanently joined (bonded) to one another by applying precise combinations of physical pressure, temperature, and/or voltage (Figure 1). Each of the above factors is set depending on the substrate materials being bonded, and the control of these parameters is crucial to a successful, high-quality, high-uniformity manufacturing process.
机译:晶圆间键合已成为诸如3D封装,MEMS,MOEMS和SOI等行业的半导体技术。在典型的晶圆键合过程中,通过施加物理压力,温度和/或电压的精确组合,将两个平坦的基板永久性地相互连接(键合)(图1)。上述每个因素都是根据要粘合的基材设置的,这些参数的控制对于成功,高质量,高均匀性的制造过程至关重要。

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