Exploring the infrared-sensing properties of polymorphous silicon-germanium (pm-Si_xGe_y:H) thin films

摘要

In this work we have performed an exploratory study of the infrared (IR) sensing properties of polymorphous silicon-germanium (pm-Si_xGe_y:H) thin films. Our objective was to study the characteristics that are important parameters for infrared detection, as activation energy (E_a), thermal coefficient of resistance (TCR), room temperature conductivity (σ_(RT)), and responsivity to IR radiation. After characterization, our results demonstrated that pm-SiGe:H films have advantages over a-Si:H,B, pm-Si:H, and pm-Ge:H, because of the possibility to tailor its properties as σ_(RT), E_a, and TCR, and moreover, the possibility to adjust those values for specific applications.