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首页> 外文期刊>Ferroelectrics: Letters Section >WET CHEMICAL ETCHING OF LEAD ZIRCONATE TITANATE THIN FILM FOR MICROELECTROMECHANICAL SYSTEMS APPLICATIONS
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WET CHEMICAL ETCHING OF LEAD ZIRCONATE TITANATE THIN FILM FOR MICROELECTROMECHANICAL SYSTEMS APPLICATIONS

机译:微机电系统应用中铅酸钛酸盐薄膜的湿化学刻蚀

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摘要

PbZr_0.52Ti_0.48O_3 thin film prepared by metal-organic decomposition method was chemically etched by utilizing HF/HNO_3 solution. Typical semiconductor processes were used to pattern the film. The dependence of the conformity of pattern transfer on the microstructure of the film was studied. The results showed that the etching rates were different between the islands of the grains and the surrounding areas within the film. The film with small grains is favored for pattern transfer of fidelity. The dimension of the islands of grains contributes greatly to the tolerance of patterned features. Tolerance of 2 mum has been achieved to fulfill the need of usage in microelectromechanical systems.
机译:利用HF / HNO_3溶液对金属有机分解法制得的PbZr_0.52Ti_0.48O_3薄膜进行化学刻蚀。使用典型的半导体工艺对膜进行构图。研究了图案转移的一致性对薄膜微观结构的依赖性。结果表明,在晶粒的岛和膜内的周围区域之间的蚀刻速率是不同的。具有小颗粒的薄膜有利于保真度的图案转印。晶粒岛的尺寸极大地影响了图案特征的容忍度。为了满足在微机电系统中使用的需要,已经达到2 m的公差。

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