FERROELECTRIC PROPERTIES OF La_(0.75)Bi_(3.25)Ti_3O_(12) CERAMIC AND THIN FILMS PREPARED BY PULSED LASER DEPOSITION

摘要

Bi_(4-x)La_xTi_3O_(12) ceramics with various La contents (x=0, 0.25, 0.50, 0.75, 1.00) are fabricated using ordinary firing (OF) and hot forging (HF) method. The hysteresis loop of BLT films deposited with HF(//) ceramic target displays low remnant polarization compared with that of OF ceramic target. The grain orientation of the ceramic target has a remarkable influence on the hysteresis loop of the film grown using PLD method. So, it is necessary to use the HF(perpendicular) ceramic target in the PLD process in order to obtain good ferroelectric properties for the film.