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Ferroelectric Bi_(3.25)La_(0.75)Ti_3O_(12) thin films on a conductive Sr_4Ru_2O_9 electrode obtained by pulsed laser deposition

机译:通过脉冲激光沉积获得的导电Sr_4Ru_2O_9电极上的铁电Bi_(3.25)La_(0.75)Ti_3O_(12)薄膜

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摘要

Strontium ruthenate and Bi_(3.25)La_(0.75)Ti_3O_(12) (BLT) layers were grown on Si(100) substrate using pulsed laser deposition technique. Starting from a Sr_2RuO_4 target, we obtained single phase films composed of Sr_4Ru_2O_9; on these strontium ruthenate electrodes, textured and non-textured BLT were grown at 700℃. Structural characterizations of these double layers were done by X-ray diffraction, scanning electron microscopy, normal and high-resolution transmission electron microscopy. The Van der Pauw's resistivity measurements indicate that Sr_4Ru_2O_9 can be used as a back electrode. The temperature dependence of the resistivity at low temperatures is ρ(T) = ρ_0exp (T_0/T)~(1/2), which corresponds to a variable-range hopping mechanism.
机译:使用脉冲激光沉积技术,在Si(100)衬底上生长钌酸锶和Bi_(3.25)La_(0.75)Ti_3O_(12)(BLT)层。从Sr_2RuO_4靶材开始,我们获得了由Sr​​_4Ru_2O_9组成的单相膜。在这些钌酸锶电极上,有纹理的和无纹理的BLT在700℃下生长。通过X射线衍射,扫描电子显微镜,常规和高分辨率透射电子显微镜对这些双层进行结构表征。 Van der Pauw的电阻率测量表明Sr_4Ru_2O_9可用作背电极。低温下电阻率的温度依赖性为ρ(T)=ρ_0exp(T_0 / T)〜(1/2),对应于变程跳跃机制。

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