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首页> 外文期刊>Ferroelectrics: Letters Section >Dielectric Properties of CaCu_3Ti_4O_(12)/CaTiO_3 Multilayer Thin Films Synthesized by PLD Method
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Dielectric Properties of CaCu_3Ti_4O_(12)/CaTiO_3 Multilayer Thin Films Synthesized by PLD Method

机译:PLD法合成CaCu_3Ti_4O_(12)/ CaTiO_3多层薄膜的介电性能

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摘要

In order to elucidate the origin of the characteristic dielectric response of CaCu_3Ti_4O_(12) (CCTO), we synthesize c-axis oriented multilayer thin films composed of alternative layers of CCTO and an insulator CaTiO_3 (CTO) using the Pulsed Laser Deposition (PLD) method and measure the capacitance of CTO/CCTO/CTO multilayer thin films with different thicknesses of CTO and CCTO layers. After removing the extrinsic elec-trode/CCTO boundary effect and the CCTO/CTO interface effect, the inherent dielectric constant of CCTO is determined.
机译:为了阐明CaCu_3Ti_4O_(12)(CCTO)的特征介电响应的起源,我们使用脉冲激光沉积(PLD)合成了由CCTO交替层和绝缘体CaTiO_3(CTO)组成的c轴取向多层薄膜方法和测量具有不同厚度的CTO和CCTO层的CTO / CCTO / CTO多层薄膜的电容。去除外部电极/ CCTO边界效应和CCTO / CTO界面效应后,即可确定CCTO的固有介电常数。

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