Study on ferroelectric and dielectric properties of niobium doped Bi_4Ti_3O_(12) ceramics and thin films prepared by PLD method

摘要

Nb doped bismuth titanate Bi_(4-X)(Ti_(1-x)Nb_x)_3O_(12) (x=0%, 0.2%, 0.4%, 1%, 1.5%) ceramic samples were sintered and random oriented Bi_(4-x)(Ti_(1-x)Nb_x)_3O_(12) (x=1%) thin films were fabricated on (111)Pt/TiO_2/SiO_2/Si with Pulsed Laser Deposition (PLD) method. The dielectric and ferroelectric properties of Nb doped Bi_4Ti_3O_(12) (BTO) were investigated. A small amount of niobium doping results in a marked improvement in 2P_r The 2P_r 2E_c, dielectric constant and loss factor of Bi_(4-x)(Ti_(1-x)Nb_x)_3O_(12) (x=1%) thin film are about 30μC/cm~2, 130 kV/cm, 175 and 0.02, respectively. However, after 3 x 10~9 switching cycles, 45% degradation of 2P_r was observed in the film.