Effect of Orientation on the Dielectric Properties of Pb_(0.97)La_(0.02)Zr_(0.95)Ti_(0.05)O_3 (PLZT) Antiferroelectric Thin Films

摘要

Through sol-gel technique, Pb_(0.97)La_(0.02)Zr_(0.95)Ti_(0.05)O_3 (PLZT) antiferroelectric thin films were deposited on Pt(111)/Ti/SiO_2/Si(100) and Pt(200)/Ti/SiO_2/Si(100) substrates, respectively. X-ray diffraction (XRD) analysis indicated that films derived on the Pt(111)/Ti/SiO_2/Si(100) substrates showed a strong (111) preferred orientation. The dependence of electrical properties derived on the two different substrates had been studied by P-E and C-V measurements. The temperature dependence of the dielectric constant denoted that the Curie temperature (T_c) of the PLZT antiferroelectric thin films deposited on Pt(111)/Ti/SiO_2/Si(100) and Pt(200)/Ti/SiO_2/Si(100) substrates were 193 deg C and 203deg C, respectively.