Preparation and stress evaluation of ferroelectric thin films of pzt based pyroelectric sensors

摘要

PZT films prepared by RF Magnetron sputteringshow different prefered orientation with respect to sputteringconditions adopted. The films were under high stress as shown bythe stress measurements. Domain formation and polarisation inferroelectric thin films are known to be strongly influenced by theintrinsic stress. PZT microstructures with Pt bottom electrodessputtered on silicon wafers were investigated using the Ramanpeak of the single crystalline silicon. The Raman shift profileswere found to be dependent on the particular geometry of theinvestigated structures and specific microstructure defects near theinterfaces. An estimate of the stress in the PZT film was obtainedby modelling the stress in the silicon as a function of distance fromone interface using a finite element calculation.