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Properties of BaTiO_3 Films Sputter Deposited on PET for Pulse Power Capacitors

机译:脉冲功率电容器在PET上溅射沉积的BaTiO_3薄膜的性能

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摘要

Flexible BaTiO_3 films is dielectric materials for pulse power capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible BaTiO_3 films were dependent on the O_2/Ar gas ratio during sputtering. All BaTiOj films were amorphous, regardless of the 0_2/Ar gas ratio, due to the low substrate temperature. The leakage current and dielectric constant of the BaTiOj films were affected by an electron transfer mechanism. The BaTiO_3 films prepared at an O_2/Ar gas ratio of 1 exhibited a dielectric constant of 53 at I kHz and a leakage current of 4×10~(-7) A at 500 kV/cm. This suggests that sputter-deposited flexible BaTiO_3 films are promising dielectrics that can be used in pulse power capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.
机译:挠性BaTiO_3薄膜是用于脉冲功率电容器的介电材料,由r.f沉积在聚对苯二甲酸乙二醇酯(PET)基底上。磁控溅射。柔性BaTiO_3薄膜的生长行为,微观结构和电学性能取决于溅射过程中O_2 / Ar气比。由于低的基板温度,所有的BaTiOj薄膜都是非晶态的,而与0_2 / Ar气体的比例无关。 BaTiOj薄膜的漏电流和介电常数受电子转移机制的影响。以O_2 / Ar气体比为1制备的BaTiO_3薄膜在1 kHz下的介电常数为53,在500 kV / cm下的漏电流为4×10〜(-7)A。这表明,由于溅射沉积的柔性BaTiO_3膜介电常数高,漏电流低且通过溅射法制备稳定,因此是可用于脉冲功率电容器的有前途的电介质。

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