THE EFFECT OF THERMAL ANNEALINGS OF PZT THIN FILMS PREPARED BY SOL-GEL

摘要

Properties of Pb(Zr_(0.52)Ti_(0.48))O_3 ferroelectric thin films prepared by rapid thermal annealing(RTA)/direct insertion thermal annealing(DITA) were investigated. The morphologies and ferroelectric properties are affected strongly by thermal treatment. The remnant polarization(Pr), and coercive force(Ec) of typical sample are about 13.7 mu C/cm~2 and 55.6 kV/cm, respectively. The dielectric constant and loss tangent are 786 and 2.4 percent at 100 Hz respectively. The PZT film prepared by RTA and dried at 350 deg C possesses desirable ferroelectric and insulation properties, which is applicable to FRAM or piezoelectric MEMS.