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首页> 外文期刊>Ferroelectrics >Interfacial Effects on Multiferroic Properties of Pb(Zr_(0.52)Ti_(0.48))O_3/Ni_(0.8)Zn_(0.2)Fe_2O_4 Bilayer Thin Films by Pulsed Laser Deposition
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Interfacial Effects on Multiferroic Properties of Pb(Zr_(0.52)Ti_(0.48))O_3/Ni_(0.8)Zn_(0.2)Fe_2O_4 Bilayer Thin Films by Pulsed Laser Deposition

机译:脉冲激光沉积对Pb(Zr_(0.52)Ti_(0.48))O_3 / Ni_(0.8)Zn_(0.2)Fe_2O_4双层薄膜的多铁性性质的界面效应

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摘要

Bilayer multiferroic thin films of Pb(Zr_(0.52)Ti_(0.48))O_3/Ni_(0.8)Zn_(0.2)Fe_2O_4 (PZT/NZF) were prepared on SrTiO_3(001) substrate via pulsed laser deposition. X-ray diffraction results showed the highly epitaxial (OOl)-orientation of the bilayer thin films were successfully fabricated. The remnant polarization 2P_r and coercive field E_c are 98.3p,C/cm~2 and 370kV/cm in the bilayer thin films, 46.1/xC/cm~2 and 115/cV/cm in the pure PZT film. The polarization and electric breakdown voltage were enhanced by about one time, which may be attributed to the tensile stress of the NZF layer onto the PZT layer, resulting in the elongated c-axis of the PZT. In addition, the saturation magnetization and coercive field for the bilayer films are 256.2emu/cm~3 and 273.60e in-plane, respectively. As a comparison, the corresponded values for the pure NZF film are 270.8emu/cm3 and 367.3Oe in-plane, which revealed that the ferromagnetic properties of the bilayer films have been decreased, which may be due to the compressive stress of the PZT layer under the NZF layer. Our results indicate that the existing interfacial strain in PZT/NFO bilayer films can result in the improvement of the ferroelectric properties and the reduction of the ferromagnetic properties.
机译:通过脉冲激光沉积在SrTiO_3(001)衬底上制备了Pb(Zr_(0.52)Ti_(0.48))O_3 / Ni_(0.8)Zn_(0.2)Fe_2O_4(PZT / NZF)的双层多铁薄膜。 X射线衍射结果表明,成功制备了双层薄膜的高度外延(OOl)取向。双层薄膜中的剩余极化2P_r和矫顽场E_c在双层薄膜中分别为98.3p,C / cm〜2和370kV / cm,在纯PZT薄膜中为46.1 / xC / cm〜2和115 / cV / cm。极化和击穿电压提高了大约一倍,这可能归因于NZF层在PZT层上的拉伸应力,导致PZT的c轴拉长。另外,双层膜的饱和磁化强度和矫顽场面内分别为256.2emu / cm〜3和273.60e。作为比较,纯NZF膜的平面内对应值为270.8emu / cm3和367.3Oe,这表明双层膜的铁磁性能已降低,这可能是由于PZT层的压应力在NZF层下。我们的结果表明,PZT / NFO双层薄膜中现有的界面应变可以导致铁电性能的改善和铁磁性能的降低。

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