Processing and Electric Field Dependent Dielectric Properties of KTa_(0.6)Nb_(0.4)O_3 Thin Films on Alumina

摘要

KTa_(0.6)Nb_(0.4)O_3 thin films on poly crystalline alumina were prepared by Chemical Solution Deposition from potassium acetate and transition metal alkoxides in 2-methoxyethanol. Influence of the reflux time on the phase composition, microstructure, and dielectric properties of the films was studied. Films, prepared from the 1 h-refluxed solutions and heated at 900 deg C have dielectric permittivity value of 860, dielectric losses value of 0.01 and tunability (C_(0V) /C_(30V)) value of 1.9. The corresponding values for the films, prepared from the 24 h-refluxed solutions, are 1690, 0.04, and 2.6, respectively.