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Composition Dependency of Epitaxial Pb(Zr,Ti)O_3 Films with Different Film Thickness

机译:不同膜厚的外延Pb(Zr,Ti)O_3薄膜的成分依赖性

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摘要

Epitaxial Pb(Zr_xT_(1-x))O_3 films with 200 nm and 2 mu m thickness were grown by metal organic chemical vapor deposition. Crystal symmetry changed from tetragonal to rhom-bohedral with increasing x value in Pb(Zr_xTi_(1-x))O_3 [x = Zr/(Zr+Ti)] for both film thickness and a region for the co-existence of the mixture of tetragonal and rhombohedral exists around x = 0.5, becoming a little wider with increasing film thickness. Saturation and remanent polarizations (P_(sat) and P_r) showed a minimum near x = 0.5 irrespective of the film thickness. The P_r/P_(sat)t ratio also showed a minimum in case of 200 nm thick films, but such a minimum in P_r/P_(sat) was not observed in case of 2 mu m thickness. Relative dielectric constant showed a maximum near x = 0.5 for both film thickness, but the effective longitudinal piezoelectric constant did not show any noticeable maximum near x = 0.5 irrespective of the film thickness, differently from the reported data for the sintered body.
机译:通过金属有机化学气相沉积法生长了厚度为200 nm,厚度为2μm的外延Pb(Zr_xT_(1-x))O_3薄膜。随着膜厚度和混合物共存区域的增加,Pb(Zr_xTi_(1-x))O_3 [x = Zr /(Zr + Ti)]中的x值增加,晶体对称性从四面体变为四面体四面体和菱面体的x大约存在于x = 0.5处,随着膜厚度的增加而变宽。饱和和剩余极化强度(P_(sat)和P_r)在x = 0.5附近显示最小值,与膜厚度无关。在200nm厚的膜的情况下,P_r / P_(sat)t的比率也显示最小值,但是在2μm的厚度的情况下,未观察到P_r / P_(sat)的最小值。相对介电常数在两种膜厚度下都显示出最大的x = 0.5附近,但是有效纵向压电常数在x = 0.5范围内都没有表现出任何明显的最大值,而与膜厚无关,这与烧结体的报道数据不同。

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