Investigation of Top/Bottom Electrode and Diffusion Barrier Layer for PZT Thick Film MEMS Sensors

摘要

Top and bottom electrodes for screen printed piezoelectric lead zirconate titanate, Pb(Zr_xTi_(1-x))O_3 (PZT) thick film are investigated with respect to future MEMS devices. Down to 100 nm thick E-beam evaporated Al and Pt films are patterned as top electrodes on the PZT using a lift-off process with a line width down to 3 mu m. A 700 nm thick ZrO_2 layer as insolating diffusion barrier layer is found to be insufficient as barrier layer for PZT on a silicon substrate sintered at 850 deg C. EDX shows diffusion of Si into the PZT layer.