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Immobilisation and synthesis of DNA on Si(111), nanocrystalline porous silicon and silicon nanoparticles

机译:在Si(111),纳米晶多孔硅和硅纳米颗粒上固定和合成DNA

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摘要

Oligonucletodies have been synthesized on hydrogen-terminated Si(111) and porous silicon using surface hydrosilation of difunctional molecules (w, ω-dimethoxytritylundecenol) to produce a monolayer bearing suitable reactive groups to allow automated solid-phase DNA synthesized on Si(111) undergo hybridisation at the surface and a straightforward electrochemical quantization of the amount of synthesized DNA and its hybrtidisation efficiency (47%) is possible using Ru(NH_3)_6~(3+) as a redox label. In the case of DNA synthesized in porous silicon, electron transfer (ET) between DNA and the underlying bulk semiconductor can be studied by cyclic votammetry, however the anisotropic diffusion inside the porous layer nd the large resistance of the porous silicon results in voltammograms for which thin-layer behaviour is not observed and the peak currents increase with the square root of scan rate. We interpret these voltammorams in terms of charge transport limitations in the layer of metal centres bound to the DNA inside the pores.
机译:使用双官能团分子(w,ω-二甲氧基三苯并癸烯醇)的表面硅氢化作用,在氢封端的Si(111)和多孔硅上合成了寡核苷酸,以产生带有合适反应性基团的单层,以使在Si(111)上合成的自动化固相DNA能够通过使用Ru(NH_3)_6〜(3+)作为氧化还原标记,可以在表面进行杂交,并对合成的DNA量及其杂交效率(47%)进行直接的电化学定量。在多孔硅中合成DNA的情况下,可以通过循环伏安法研究DNA与下面的体半导体之间的电子转移(ET),但是多孔层内部的各向异性扩散以及多孔硅的大电阻导致伏安图没有观察到薄层行为,峰值电流随扫描速率的平方根增加。我们用结合在孔内DNA的金属中心层中的电荷传输限制来解释这些伏安。

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