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Synthesis of ultra-small silicon nanoparticles by femtosecond laser ablation of porous silicon

机译:飞秒激光烧蚀多孔硅合成超小硅纳米粒子

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We report a detailed study on the synthesis of ultra-small (1–10 nm) colloidal silicon nanoparticles (Si NPs) by ablating porous silicon (pSi) in acetone using femtosecond laser pulses. Porous silicon is considered as a target material for ablation because it contains a large number of light emitting silicon nanoparticles. The pSi samples were prepared by anodic etching of silicon in aqueous HF solution for different etching current densities. Transmission electron microscope measurements confirmed the successful formation of well-isolated spherical silicon nanoparticles. The average size of spherical NPs were estimated to be ~7.6, ~7, and ~6 nm when anodic etching current densities of 5, 10, and 20 mA/cm2 were used respectively for preparing pSi targets. The crystallinity of these Si NPs was confirmed by selective area electron diffraction and Raman spectroscopy measurements. The observed blue shift in the absorption and emission spectra are attributed to reduction in the average particle size with increase in etching current density. These Si NPs may be useful for fabricating low-dimensional microelectronic compatible photonic devices.
机译:我们报告了通过使用飞秒激光脉冲烧蚀丙酮中的多孔硅(pSi)来合成超小(1-10 nm)胶体硅纳米颗粒(Si NPs)的详细研究。多孔硅被认为是消融的目标材料,因为它包含大量的发光硅纳米颗粒。对于不同的蚀刻电流密度,通过在HF水溶液中对硅进行阳极蚀刻来制备pSi样品。透射电子显微镜测量证实成功形成了良好隔离的球形硅纳米颗粒。当分别使用5、10和20mA / cm2的阳极刻蚀电流密度制备pSi靶时,球形NP的平均尺寸估计约为7.6,〜7和〜6 nm。通过选择性区域电子衍射和拉曼光谱测量证实了这些Si NP的结晶度。吸收光谱和发射光谱中观察到的蓝移归因于平均粒径随蚀刻电流密度的增加而减小。这些Si NP可用于制造低维微电子兼容的光子器件。

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