Electrical Conductivity of CuI-Cu2Se-As2Se3 Chalcogenide Films Prepared by Chemical Deposition

摘要

The electrical conductivity of CuI-Cu2Se-As2Se3 chalcogenide semiconductor films prepared through the chemical deposition from an organic solvent has been investigated as a function of the temperature and composition of the films. It has been established that the electrical properties of the chalcogenide glasses and related films are characterized by the same values within the limits of the experimental error. This result is in agreement with the model of dissolution of vitreous semiconductors in organic bases (amines), according to which the main properties of bulk (cast) chalcogenide glasses are retained in films prepared from these glasses.