Investigation of the Saturated Vapor Pressure of Selenium and Indium Sesquiselenide In_(0.4)Se_(0.6)

A.M.Klimova; V.A.Ananichev; A.I.Demidov

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Investigation of the Saturated Vapor Pressure of Selenium and Indium Sesquiselenide In_(0.4)Se_(0.6)

机译：硒和倍半硒化铟In_（0.4）Se_（0.6）的饱和蒸气压研究

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The temperature dependences of the saturated vapor pressure of selenium(700-1100 K)and indium sesquiselenide In_(0.4)Se_(0.6)(1123-1373 K)are investigated using the gravimetric method.The saturated vapor pressures obtained in this study for selenium and the In_(0.4)Se_(0.6)compound are in satisfactory agreement with the data available in the literature.The enthalpy of vaporization of In_(0.4)Se_(0.6)is estimated.

机译：用重量法研究了硒（700-1100 K）和倍半硒化铟In_（0.4）Se_（0.6）（1123-1373 K）的饱和蒸汽压的温度依赖性。本研究获得的硒的饱和蒸汽压In_（0.4）Se_（0.6）的化合物与文献中的数据令人满意。估算In_（0.4）Se_（0.6）的蒸发焓。

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《Glass Physics and Chemistry: A Journal on the Structural, Physical, and Chemical Properties and Nature of Inorganic Glasses and Glass-Forming Melts》 |2006年第4期|共3页
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A.M.Klimova; V.A.Ananichev; A.I.Demidov;
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1. Investigation of the Saturated Vapor Pressure of Selenium and Indium Sesquiselenide In_(0.4)Se_(0.6) [J] . A.M.Klimova, V.A.Ananichev, A.I.Demidov Glass Physics and Chemistry: A Journal on the Structural, Physical, and Chemical Properties and Nature of Inorganic Glasses and Glass-Forming Melts . 2006,第4期

机译：硒和倍半硒化铟In_（0.4）Se_（0.6）的饱和蒸气压研究
2. Fabrication of 80-nm T-gate high indium In_(0.7)Ga_(0.3)As/In_(0.6)Ga_(0.4)As composite channels mHEMT on GaAs substrate with simple technological process [J] . Ji Xian, Zhang Xiaodong, Kang Weihua, Journal of Semiconductors . 2016,第2期

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Investigation of the Saturated Vapor Pressure of Selenium and Indium Sesquiselenide In_(0.4)Se_(0.6)

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