Growth Characteristics of Amorphous Silicon Oxide Naeowires Synthesized viaAnnealing of Ni/SiO2/Si Substrates

摘要

In this work, we investigate the growth behavior of silicon oxide nanowires via a solid-liquid-solid process. Silicon oxide nanowires were synthesized at 1000 °C in an Ar and H2 mixed gas. A pre-oxidized silicon wafer and a nickel film are used as the substrate and catalyst, respectively. We propose two distinctive growth modes for the silicon oxide nanowires that both act as a unique solid-liquid-solid growth process. We named the two growth mechanisms "grounded-growth" and "branched-growth" modes to characterize their unique solid-liquid-solid growth behavior. The two growth modes were classified by the generation site of the nanowires. The grounded-growth mode in which the grown nanowires are generated from the substrate and the branched-growth mode where the nanowires are grown from the side of the previously grown nanowires or at the metal catalyst drop attached at the tip of the nanowire stem.