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Doping-Concentration and Annealing Effects on Photoluminescence Profile of Eu(III)-doped CeO2 nanorods

机译:掺杂浓度和退火对掺Eu(III)的CeO2纳米棒光致发光轮廓的影响

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摘要

Eu(III)-doped CcO2 nanorods were prepared by a co-precipitation method at room temperature, and their photoluminescence profiles were examined with different Eu(III)-doping concentrations and thermal annealing temperatures. Scanning electron microscopy, X-ray diffraction crystallography and UV-Vis absorption spectroscopy were employed to examine the morphology, crystal structure and photon absorption profiles of the nanorods, respectively. Additionally, their 2D and 3D-photoluminescence profile maps were obtained to fully understand the photoluminescence mechanism. We found that the magnetic dipole ~5D0 ->~7F1 and the electric dipole ~5D0 —>~7F2 transitions of Eu(M) were highly dependent on the doping concentration, annealing temperature and excitation wavelength, which was explained by the presence of different Eu(III)-doping sites (with and without an inversion center) in the CeO2 host with a cubic crystal structure.
机译:在室温下通过共沉淀法制备了Eu(III)掺杂的CcO2纳米棒,并在不同Eu(III)掺杂浓度和热退火温度下检查了它们的光致发光曲线。利用扫描电子显微镜,X射线衍射晶体学和UV-Vis吸收光谱法分别检查了纳米棒的形貌,晶体结构和光子吸收曲线。此外,获得了他们的2D和3D光致发光轮廓图,以充分了解光致发光机理。我们发现Eu(M)的磁偶极〜5D0→7F1和电偶极〜5D0→7F2跃迁高度依赖于掺杂浓度,退火温度和激发波长,这可以通过存在不同的原因来解释。 CeO2主体中具有立方晶体结构的Eu(III)掺杂位点(带有和不带有反转中心)。

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