New Principles of Designing Multibeam Electron-Optical Microsystems for Diagnostics of Semiconductor Structures

摘要

A new approach to fabrication of diagnostic electron-optical systems of high (10-30 nm) and ultra-high (to 2 nm) resolution for defect inspection of large-diameter semiconductor wafers is proposed. Electronoptical calculation of electron-optical systems with different configurations is performed. The efficiency ofusing thin films for increasing quality of electron-optical systems is estimated.