首页> 外国专利> Lift-off method useful in semiconductors and microsystems comprises providing semiconductor substrate, where structured photoresist layer is applied on semiconductor substrate and metal layer is applied on photoresist layer

Lift-off method useful in semiconductors and microsystems comprises providing semiconductor substrate, where structured photoresist layer is applied on semiconductor substrate and metal layer is applied on photoresist layer

机译:在半导体和微系统中有用的剥离方法包括提供半导体衬底,其中在半导体衬底上施加结构化的光刻胶层,而在光刻胶层上施加金属层

摘要

Lift-off method comprises providing a semiconductor substrate (wafer), where a structured photoresist layer (2) is applied on the semiconductor substrate (1) and a metal layer (6) is applied on the photoresist layer. The portion of the metal layer located on the photoresist layer together with the photoresist layer is removed by treating with dimethyl sulfoxide and simultaneously applying megasound of the semiconductor substrate. An independent claim is also included for a device for carrying out the above method comprising a process chamber comprising a holding device for holding the wafer and a loading unit for loading the holding device with the wafer, and at least one supply unit for supplying and applying of dimethylsulfoxide on the wafer and a megasound device with which the wafer is subjected with megasound.
机译:剥离方法包括提供半导体衬底(晶片),其中在半导体衬底(1)上施加结构化的光致抗蚀剂层(2),并且在光致抗蚀剂层上施加金属层(6)。通过用二甲基亚砜处理并同时施加兆声级的半导体衬底,去除位于光致抗蚀剂层上的金属层与光致抗蚀剂层一起的部分。还包括用于执行上述方法的设备的独立权利要求,该设备包括处理室,该处理室包括用于保持晶片的保持装置和用于向该保持装置装载晶片的装载单元,以及至少一个用于供应和施加晶片的供应单元。晶片上的二甲亚砜和一个使晶片受到兆声的兆声器件。

著录项

  • 公开/公告号DE102012105384A1

    专利类型

  • 公开/公告日2012-09-06

    原文格式PDF

  • 申请/专利权人 AP&S INTERNATIONAL GMBH;

    申请/专利号DE201210105384

  • 发明设计人 ERFINDER WIRD SPÄTER GENANNT WERDEN;

    申请日2012-06-21

  • 分类号H01L21/321;H01L21/28;

  • 国家 DE

  • 入库时间 2022-08-21 17:04:46

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