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Lift-off method useful in semiconductors and microsystems comprises providing semiconductor substrate, where structured photoresist layer is applied on semiconductor substrate and metal layer is applied on photoresist layer
Lift-off method useful in semiconductors and microsystems comprises providing semiconductor substrate, where structured photoresist layer is applied on semiconductor substrate and metal layer is applied on photoresist layer
Lift-off method comprises providing a semiconductor substrate (wafer), where a structured photoresist layer (2) is applied on the semiconductor substrate (1) and a metal layer (6) is applied on the photoresist layer. The portion of the metal layer located on the photoresist layer together with the photoresist layer is removed by treating with dimethyl sulfoxide and simultaneously applying megasound of the semiconductor substrate. An independent claim is also included for a device for carrying out the above method comprising a process chamber comprising a holding device for holding the wafer and a loading unit for loading the holding device with the wafer, and at least one supply unit for supplying and applying of dimethylsulfoxide on the wafer and a megasound device with which the wafer is subjected with megasound.
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