Study of the Transverse Conductivity of Polycrystalline Silicon FilmsFabricated by Magnetron Sputtering

摘要

The transverse conductivity of undoped polycrystalline silicon ( PCS) films 0.2-0.6 μm thick, deposited by magnetron sputtering on heavily doped single-crystal substrates is studied. Molybdenum films 0.4 μm thick were used as top electrodes. The dependences of the film resis-tivity on the electric field strength are obtained, which are described by the space-charge limited conduction model for the quasi-uniform distribution of traps in the PCS band gap.