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首页> 外文期刊>European journal of inorganic chemistry >Enhancing Electron Injection in Dye-Sensitized Solar Cells by Adopting W6+-Doped TiO2 Nanowires: A Theoretical Study
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Enhancing Electron Injection in Dye-Sensitized Solar Cells by Adopting W6+-Doped TiO2 Nanowires: A Theoretical Study

机译:通过掺杂W6 +的TiO2纳米线增强染料敏化太阳能电池中的电子注入:理论研究

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摘要

As a donor type dopant in titanium dioxide, W6+ was found to move the conduction band (CB) edge of TiO2 downward and also to influence the electron-injection process in dyesensitized solar cells (DSSCs). To investigate the electron-injection capabilities of DSSCs and to optimize their efficiency by W6+ doping, the geometry and electronic properties of both free and adsorbed TiO2 nanowires were investigated on the basis of extensive density functional theory calculations. A four-layer (TiO2)(12) nanowire with 12 possible doping sites was set up, and the effect of W6+ in different positions was analyzed. The results indicate that in the W6+-doped (TiO2)(12) systems, the Ti-OW (OW = oxygen atom that is con-nected to the W atom) bonds are longer than the corresponding Ti-O bonds in (TiO2)(12). The CB edge is significantly influenced by the doping position. The CB energy level moves upward gradually as doped W6+ moves deep into (TiO2)(12). For all adsorbed catechol/(TiO2)(12) systems with the W6+ dopant, the LUMO maps are distributed over the layer in which W6+ is doped. The W6+ doping position plays a crucial role in the electron-injection and electron-transport process in DSSCs. Therefore, different positions of W6+ doping in TiO2 would be a feasible strategy to control and improve semiconductor materials to obtain DSSCs with more efficient electron injection.
机译:作为二氧化钛中的施主型掺杂剂,发现W6 +使TiO2的导带(CB)边缘向下移动,并且还影响了染料敏化太阳能电池(DSSC)中的电子注入过程。为了研究DSSC的电子注入能力并通过W6 +掺杂优化其效率,在广泛的密度泛函理论计算的基础上,研究了自由和吸附的TiO2纳米线的几何形状和电子性能。建立了具有十二个可能的掺杂位点的四层(TiO2)(12)纳米线,并分析了W6 +在不同位置的影响。结果表明,在掺杂W6 +的(TiO2)(12)系统中,Ti-OW(OW =与W原子连接的氧原子)键比(TiO2)中相应的Ti-O键长。 (12)。 CB边缘受掺杂位置的影响很大。随着掺杂的W6 +深入(TiO2)(12),CB能级逐渐升高。对于所有具有W6 +掺杂的邻苯二酚/(TiO2)(12)吸附系统,LUMO图均分布在其中掺杂了W6 +的层上。 W 6+的掺杂位置在DSSC的电子注入和电子传输过程中起着至关重要的作用。因此,在TiO2中掺杂W6 +的不同位置将是控制和改进半导体材料以获得更高效电子注入的DSSC的可行策略。

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