Synthesis of B-Sb by rapid thermal annealing of B/Sb multilayer films

摘要

Group III-V compound B-Sb films were synthesized from B/Sb/.../B multilayer films deposited by electron gun evaporation onto silicon substrate and subjecting the above multilayer to rapid thermal annealing at 773 K for 3 min. The films were characterized by XRD, TEM, XPS and optical studies. XPS studies indicated the ratio of B : Sb ~1. XRD and electron diffraction patterns indicated the reflections from (100), (111), (102) and (112) planes of zinc blende BSb. Band gap evaluated from optical studies was approx 0.51 eV. Refractive index of the films varied between 1.65 and 2.18 with increasing energy of incident photon and plasma frequency (EPSILON_P) was estimated to be approx 2.378 x 10~(-14) s~(-1). The effective mass was computed to be approx 0.0845 m_e.