Designing of high-resolution photoresists: use of modern NMR techniques for evaluating lithographic performance

摘要

Applications of improved 1-D/ 2-D NMR spectroscopic techniques have been reviewed for quantitatively estimating the incorporation of different monomers and degree of linearity in resin microstructure. Comparison of the NMR data with those from lithography leads to a distinct correlation between resin micro-structure and lithographic performance. A novel photoresist mechanism is proposed in a positive photoresist; also, using modern NMR techniques, the crosslinking mechanism in a negative photoresist has been studied.