Many electron effects in semiconductor quantum dots

摘要

Semiconductor quantum dots (QDs) exhibit shell structures, very similar to atoms. Termed as 'artificial atoms' by some, they are much larger (1-100 nm) than real atoms. One can study a variety of many-electron effects in them, which are otherwise difficult to observe in a real atom. We have treated these effects within the local density approximation (LDA) and the Harbola-Sahni (HS) scheme. HS is free of the self-interaction error of the LDA. Our calculations have been performed in a three-dimensional quantum dot. We have carried out a study of the size and shape dependence of the level spacing. Scaling laws for the Hubbard 'U' are established.