...
首页> 外文期刊>EPL >Electron spin relaxation as tracer of excitons in a two-dimensional electron-hole plasma inside a (110)-GaAs quantum well
【24h】

Electron spin relaxation as tracer of excitons in a two-dimensional electron-hole plasma inside a (110)-GaAs quantum well

机译:电子自旋弛豫作为(110)-GaAs量子阱内二维电子空穴等离子体中激子的示踪剂

获取原文
获取原文并翻译 | 示例
           

摘要

We show that a fast electron spin relaxation time in (110)-oriented GaAs/AlGaAs quantum wells is governed by the presence of excitons at low temperatures and intermediate excitation densities. The electron loses its spin orientation within an exciton due to the long-range part of the exciton anisotropic spin exchange interaction and unveils excitonic signatures within the many particle electron-hole system. The temperature-dependent time- and polarization-resolved photoluminescence measurements span five decades of carrier density, comprise the transition from localized excitons over quasi-free excitons to an electron-hole plasma, and reveal strong excitonic signatures even at relatively high densities and temperatures.
机译:我们表明,在(110)取向的GaAs / AlGaAs量子阱中,快速的电子自旋弛豫时间受低温和中间激发密度的激子存在的支配。由于激子各向异性自旋交换相互作用的长距离部分,电子在激子内失去了自旋取向,并在许多粒子电子-空穴系统中揭示了激子特征。温度相关的时间和极化分辨光致发光测量跨越了数十年的载流子密度,包括从局部激子到准无激子到电子空穴等离子体的跃迁,甚至在相对较高的密度和温度下也显示出强大的激子特征。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号