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首页> 外文期刊>Electrochimica Acta >Coupling between ionic defect structure and electronic conduction in passive films on iron, chromium and iron-chromium alloys
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Coupling between ionic defect structure and electronic conduction in passive films on iron, chromium and iron-chromium alloys

机译:铁,铬和铁铬合金钝化膜中离子缺陷结构与电子传导之间的耦合

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摘要

A quantitative kinetic model is presented for the steady-state passive films on Fe, Cr and Fe-Cr alloys. It emphasises the coupling between the ionic defect structure and electronic conduction. According to the model, the passive him can be represented as a heavily doped n-type semiconductor-insulator-p-type semiconductor junction. At low potentials in the passive state, the positive defects injected at the metal/film interface play the role of electron donors. At high positive potentials, the negative defects injected at the film/solution interface play the role of electron accepters. At sufficiently high positive potentials the concentration of these ionic defects and corresponding electron holes reaches high enough values for the film to transform into a conductor. This enables transpassive dissolution of Cr and oxygen evolution on the film surface. Equations for the electronic conductivity of the passive film, as depending on the concentration of point defects, are derived. The proposed model is compared with experimental data obtained for pure Fe, pure Cr, Fe-12%Cr alloy and Fe-25%Cr alloy passivated in 0.1 M berate solution (pH 9.2) using rotating ring-disk voltammetry, photocurrent and impedance spectroscopy and in situ de resistance measurements by the contact electric resistance (CER) technique. (C) 2000 Elsevier Science Ltd; All rights reserved. [References: 56]
机译:提出了用于Fe,Cr和Fe-Cr合金上的稳态钝化膜的定量动力学模型。它强调了离子缺陷结构与电子传导之间的耦合。根据该模型,无源他可以表示为重掺杂的n型半导体-绝缘体-p型半导体结。在被动状态下处于低电位时,在金属/膜界面处注入的正缺陷会发挥电子给体的作用。在高正电势下,在薄膜/溶液界面处注入的负缺陷起电子受体的作用。在足够高的正电势下,这些离子缺陷和相应的电子空穴的浓度达到足以使薄膜转变为导体的足够高的值。这使得Cr能够在膜表面上过铬溶解并产生氧气。根据点缺陷的浓度,推导了无源膜的电导率方程。使用旋转环盘伏安法,光电流和阻抗谱,将所提出的模型与在0.1 M贝拉特溶液(pH 9.2)中钝化的纯Fe,纯Cr,Fe-12%Cr合金和Fe-25%Cr合金的实验数据进行比较。以及通过接触电阻(CER)技术进行的原位电阻测量。 (C)2000爱思唯尔科学有限公司;版权所有。 [参考:56]

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