Texturization of Semiconductor Surfaces: ZnTe

摘要

We report on the texturization of ZnTe crystal surfaces by electrochemical etching using acidic solution (HNO_3:HCl:H_2O)(1:4:20). The morphology of etched crystals is examined by scanning electron microscopy and selected micrographs are presented to illustrate the effects of different experimental conditions. Electrochemical etching under galvanostatic conditions (100-300 mA cm~(-2)) gives generally more reproducible and homogeneous etch pits. Current-potential characteristics of the p-ZnTe/electrolyte junctions have been studied in the dark and under illumination. We observed an enhancement of the photocurrent after the electrochemical etching process due to increased absorption after the electrochemical etching.