Highly transparent p-type ZnO thin films prepared by non-toxic sol-gel process

摘要

In-N co-doped p-type ZnO thin films were demonstrated using a non-toxic sol-gel spin coating process. The resistivity of the p-type ZnO films is 4.43 cm with the carrier concentration of 1.36 10 ~(18) cm ~(-3) at room temperature. The X-ray photoelectron spectra of N 1s core level measured with an Al K photon line identify the existence of nitrogen in the p-type ZnO. The secondary ion mass spectrometry depth profile also confirms the nitrogen contents in the In-N co-doped films. In addition, the In-N co-doped film with a thickness of 200 nm has a high transparency about 90 in the visible region.