Microporous Silicon as a Light Trapping Layer for Photodiodes

摘要

Porous silicon films with micropore structures were grown on the surface of silicon wafers by an anodization process. The microporous silicon film was found to be an excellent light trapping layer. It was demonstrated that a quantum efficiency of higher than 90% could be obtained with incident angles of 40, 80, and 58°, and for s-, p-, and randomly polarized light, respectively.