首页> 美国卫生研究院文献>Journal of Research of the National Institute of Standards and Technology >Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part III: Interpolating and Extrapolating Internal Quantum-Efficiency Calibrations
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Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part III: Interpolating and Extrapolating Internal Quantum-Efficiency Calibrations

机译:用于高精度应用的硅光电二极管的数值建模第三部分:内插和外推内部量子效率校准

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摘要

The semiconductor device modeling program PC-ID and the programs that support its use in high-accuracy modeling of photodiodes, all of which were described in Part I of this series of papers, are used to simulate the interpolation of high-accuracy internal quantum-efficiency calibrations in the spectral region between 450 nm and 850 nm. Convenient interpolation formulae that depend only upon wavelength are derived. Uncertainty spectra for a number of sources of error are also derived. The formulae are normalized to experimental internal-quantum efficiency calibrations in the 440 to 470 nm spectral region and at 860 nm and arc used to interpolate the calibration values between these wavelengths. The results of the interpolations are compared with experimental calibration data that are available at a few wavelengths between 440 and 860 nm. The disagreement between the interpolated and measured internal quantum-efficiency data is never worse than 0.0003.
机译:半导体器件建模程序PC-ID及其支持其在光电二极管高精度建模中使用的程序,所有这些都在本系列论文的第I部分中进行了描述,这些程序用于模拟高精度内部量子阱的插值。在450 nm至850 nm的光谱范围内进行效率校准。推导了仅取决于波长的便捷插值公式。还得出了许多误差源的不确定度谱。这些公式针对440至470 nm光谱区域以及860 nm处的实验内部量子效率校准进行了归一化,并用于在这些波长之间内插校准值。将插值结果与在440至860 nm之间的某些波长下可获得的实验校准数据进行比较。内插和测量的内部量子效率数据之间的差异永远不会比0.0003差。

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