Light-trapping layer for thin-film silicon solar cells

摘要

A light trapping layer (104) for use in a thin film solar cell is provided. The light trapping texture enhances efficiency of the thin film solar cell. The light trapping layer (104) has a plurality of substantially flat areas between a plurality of periodically repeating non-pointed depressions with rounded edges (504). The plurality of substantially flat areas (502) facilitates deposition and growth of a layer (108) of transparent conductive oxide over said light trapping layer. The plurality of periodically repeating non-pointed depressions with rounded edges (504) limit formation of at least one of cracks, voids, and low density areas in semiconductor layers of the thin film solar cell. Period of the non-pointed depressions (504) ranges between 100 nanometers and 1500 nanometers, and depth of said non-pointed depressions ranges (504) between 50 nanometers and 1200 nanometers.