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Interface Characterization of Cobalt Contacts on Bismuth Selenium Telluride for Thermoelectric Devices

机译:热电器件中碲化铋硒上钴触点的界面表征

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Sputtered Co is investigated as a suitable contact metal for bulk Bi-2(Te,Se)(3), and the results are compared to sputtered Ni. The coefficient of thermal expansion of Co matches that of bulk Bi-2(Te,Se)(3) used in our study, and the compatible interface favors the selection of Co as a contact metal. Significant Ni diffusion into Bi-2(Te,Se)(3) was observed. In contrast, Co on Bi-2(Te,Se)(3) shows significantly less diffusion, even at anneal temperatures as high as 200 degrees C. CoTe2 is the preferred phase that is formed. First principles calculations for Bi2Te3 support the experimental observation.
机译:研究了溅射Co作为合适的块状Bi-2(Te,Se)(3)的接触金属的方法,并将结果与​​溅射Ni进行了比较。 Co的热膨胀系数与我们研究中使用的块状Bi-2(Te,Se)(3)相匹配,并且相容的界面有利于选择Co作为接触金属。观察到Ni大量扩散到Bi-2(Te,Se)(3)中。相反,即使在高达200摄氏度的退火温度下,Bi-2(Te,Se)(3)上的Co仍显示出明显较少的扩散。CoTe2是形成的优选相。 Bi2Te3的第一性原理计算支持实验观察。

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