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An Electrochemical Method for CuO Thin Film Deposition from Aqueous Solution

机译:水溶液中CuO薄膜沉积的电化学方法

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An electrochemical procedure is described for the anodic deposition of CO thin films from solution precursors at 25-30 deg C in an alkaline medium (pH > 13). The deposition bath was similar to Fehling's solution using tartrate ions as a complexing agent for Cu(II). Cupric oxide deposited onto a platinum substrate at an anodic current density of 5 mA cm~(-2) has a preferred orientation of [010]. Rietveld refinement of the powder diffraction pattern reveals pure Cu(II) oxide with no trace of other copper oxides. The suggested mechanism involves the irreversible electrochemical oxidation of the tartrate ligand of the Cu(II) complex leading to the CoO precipitation. The same bath can also be used to deposit Cu_2O films using a cathodic electrodeposition process. In this case, cuprous oxide deposited onto a platinum electrode has a [111] preferred orientation.
机译:描述了一种电化学程序,用于在碱性介质(pH> 13)中于25-30摄氏度下从溶液前体阳极沉积CO薄膜。该沉积浴类似于使用酒石酸根离子作为Cu(II)的络合剂的Fehling溶液。以5mA cm-(-2)的阳极电流密度沉积到铂基底上的氧化铜具有优选的取向[010]。粉末衍射图的Rietveld精炼显示出纯的Cu(II)氧化物,没有其他氧化铜的痕迹。所建议的机制涉及Cu(II)配合物的酒石酸配体的不可逆电化学氧化,导致CoO沉淀。使用阴极电沉积工艺,也可将同一浴液用于沉积Cu_2O膜。在这种情况下,沉积在铂电极上的氧化亚铜具有[111]优选方向。

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