Improvement of ATO Electrode Stability by Doping with a Trace Amount of Ir

摘要

Antimony-doped tin oxide (ATO) thin films were prepared on titanium substrates using a thermal decomposition technique. Their stability improved by 9 times when doped with 0.1 mol percent of indium. A service life of 112 h was obtained under a current density of 1000 A/m~2 in 1 M H_2SO_4 solution. Cyclic voltammograms show that the Ir-doped ATO behaves similarly to conventional ATO with an ideal polarizable nature of the solid-electrolyte interface. Good linearity was observed for potential vs. logarithmic current density. The redox reaction of the [Fe(CN)_6] ~(3-)/[Fe(CN_)6] ~(4-) couple on the Ti/ATO electrode is nearly reversible.