Accurate SIMS doping profiling of aluminum-doped solid-phase epitaxy silicon islands

摘要

A procedure has been implemented for a quantitative aluminum-doping profiling of mu m-scale aluminum-induced solid-phase-epitaxy (SPE) Si islands formed at 400 degrees C. The aluminum concentration was measured to be 1-2 x 10(19) cm(-3), which is about 10 times higher than previously reported electrical activation levels. The elemental concentration was measured by secondary-ion-mass-spectroscopy (SIMS) on arrays of SPE Si islands grown by a recently developed process that allows control of the island geometry. (C) 2008 The Electrochemical Society.