首页> 外文期刊>Electrochemical and solid-state letters >FTO/SnO2/BiVO4 composite photoelectrode for water oxidation under visible light irradiation
【24h】

FTO/SnO2/BiVO4 composite photoelectrode for water oxidation under visible light irradiation

机译:FTO / SnO2 / BiVO4复合光电极在可见光照射下用于水氧化

获取原文
获取原文并翻译 | 示例
           

摘要

An SnO2 layer prepared from ethanol solution was applied to fabricate an FTO/SnO2/BiVO4 composite photoelectrode. The layered composite films were characterized by X-ray diffraction, scanning electron microscope, and X-ray photoelectron spectroscopy techniques. The photocurrent efficiency of BiVO4 increased remarkably when an SnO2 film was layered between the BiVO4 layer and the fluorine-doped tin oxide (FTO) conducting electrode, indicating the efficient charge separation via the electron transfer from BiVO4 to SnO2 and the blocking of the hole transfer from BiVO4 to the FTO surface. It was also demonstrated that the sequence for depositing the individual metal oxide layer on the FTO substrate was an important factor for such efficient charge separation of the electrode.
机译:涂覆由乙醇溶液制备的SnO2层,以制造FTO / SnO2 / BiVO4复合光电极。通过X射线衍射,扫描电子显微镜和X射线光电子能谱技术表征层状复合膜。当在BiVO4层和掺氟氧化锡(FTO)导电电极之间层叠SnO2膜时,BiVO4的光电流效率显着提高,表明通过从BiVO4到SnO2的电子转移和空穴转移的阻断,电荷有效分离。从BiVO4到FTO表面。还证明了在FTO衬底上沉积单个金属氧化物层的顺序是电极的这种有效电荷分离的重要因素。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号