首页> 外文学位 >Visible Light Driven Photoelectrodes Made of Earth Abundant Elements for Water Photoelectrolysis.
【24h】

Visible Light Driven Photoelectrodes Made of Earth Abundant Elements for Water Photoelectrolysis.

机译:可见光驱动的光电极,由大量用于水光电解的元素制成。

获取原文
获取原文并翻译 | 示例

摘要

With the aim of creating a clean and sustainable energy supply, the direct use of solar energy to produce chemical energy has been pursued for many years. Particularly, the photoelectrolysis of water to generate hydrogen by semiconductor photoelectrodes has attracted great attention because of its advantage of using only water and sunlight, both of which are widely distributed, as raw materials. The earth abundant and visible light absorbing materials are promising for this application for the advantages of easy access and high theoretical solar to hydrogen conversion efficiency. In this thesis, the cadmium sulfide based and copper oxide based photoelectrodes were fabricated and characterized to determine their potential for photoelectrolysis.;As one of the semiconductors with relatively narrow band gap, CdS (2.4eV) has a conduction band edge more negative than the water reduction potential level and a valence band edge more positive than the water oxidation potential level, enabling n-type CdS and p-type CdS as good candidates for photoanode and photocathode respectively. CdS thin film with thickness around 2mum was deposited onto Mo back contact on glass, which formed ohmic contact with CdS. The as-prepared CdS was intrinsic n-type due to the easy formation of sulfur vacancies and it was converted to p-type by the controlled thermal diffusion of copper atoms which substituted cadmium to produce acceptor state. The optimal Cu doping level for the interest of water photoelectrolysis was found to be at 5.4% concentration.;Cu2O with band gap of 2.0eV is another attracting competitor for the photoelectrode among the metal-oxide semiconductors. Both thin film and highly aligned nanowire arrays Cu2O were prepared by thermal oxidation of Cu film and Cu nanowires on Au substrates synthesized by electrodeposition. Cu2O was found to be p-type because of the copper vacancies. The photocurrent of the Cu2O nanowires photocathode was found to be twice that of the Cu2O film, and the bare Cu2O photocathode suffered from a significant photo-induced reductive decomposition. By modifying the surface of the Cu2O nanowires with protecting layers of CuO and TiO2, direct contact of Cu2O with the electrolyte was avoided, and the Cu2O/CuO/TiO2 coaxial nanocable structures were found to gain 74% higher photocurrent and 4.5 times higher stability.;Furthermore, the co-catalysts were also used to modify the photoelectrode surface to reduce the water splitting overpotentials by facilitating the transfer of the photo-induced carriers to the electrolyte. Cobalt based co-catalysts, both the Co2+ and Co3O4 thin film, enhanced the stability of the intrinsic n-CdS photoanode. The Pt modification of CdS:Cu, effectively eliminating the large transient photocurrent, enhanced the photocurrent and stability and positively shifted the onset potential of the cathodic photocurrent by 90 mV, and the hydrogen evolution from the p-type CdS:Cu/Pt photocathode was observed for the first time.;This thesis not only studied the water photoelectrolysis potentials of CdS and Cu2O, but also presented general methods to prevent photocorrosion and enhance photo-activity, which could be also applied to other visible light responsive and earth abundant materials to enlarge the range of material choice for solar water splitting.
机译:为了建立清洁和可持续的能源供应,多年来一直追求直接利用太阳能生产化学能。特别地,由于半导体光电极的水的光电解以产生氢的原因,因为其仅使用水和日光两者的优点,水和日光这两者均被广泛地分布,作为原材料,因此其备受关注。富含地球和可见光的吸光材料因其易于获取和理论上太阳到氢的高转换效率而有望用于该应用。本论文制备了硫化镉基和氧化铜基光电极,并对其特性进行了确定,以确定其光电解的潜力。作为带隙较窄的半导体之一,CdS(2.4eV)的导带边缘比负带隙大。减水势能级和价带边缘比水氧化势能级更正,使n型CdS和p型CdS分别成为光电阳极和光电阴极的良好候选者。将厚度约为2μm的CdS薄膜沉积到玻璃上的Mo背触点上,该触点与CdS形成欧姆接触。所制备的CdS由于容易形成硫空位而成为本征n型,并且通过控制取代镉以产生受体态的铜原子的热扩散将其转变为p型。发现对于水光电解而言,最佳的Cu掺杂水平为5.4%。带隙为2.0eV的Cu 2 O是金属氧化物半导体中光电极的另一个吸引竞争者。薄膜和高度对准的纳米线阵列Cu2O都是通过在电沉积合成的Au基板上对Cu膜和Cu纳米线进行热氧化而制备的。由于铜的空位,发现Cu 2 O为p型。发现Cu 2 O纳米线光电阴极的光电流是Cu 2 O膜的光电流的两倍,并且裸Cu 2 O光电阴极遭受显着的光诱导的还原分解。通过用CuO和TiO2的保护层修饰Cu2O纳米线的表面,避免了Cu2O与电解质的直接接触,发现Cu2O / CuO / TiO2同轴纳米电缆结构的光电流提高了74%,稳定性提高了4.5倍。 ;此外,助催化剂还被用于修饰光电极表面,以通过促进光致载流子向电解质的转移来减少水分解过电势。钴基助催化剂(Co2 +和Co3O4薄膜)均增强了本征n-CdS光阳极的稳定性。 CdS:Cu的Pt修饰可有效消除大的瞬态光电流,增强光电流和稳定性,并使阴极光电流的起始电位正移90 mV,并且从p型CdS:Cu / Pt光阴极放出氢本论文不仅研究了CdS和Cu2O的水电解电势,而且提出了防止光腐蚀和增强光活性的一般方法,也可用于其他对可见光敏感且富含地球的材料。扩大太阳能水分解的材料选择范围。

著录项

  • 作者

    Huang, Qiang.;

  • 作者单位

    The Chinese University of Hong Kong (Hong Kong).;

  • 授予单位 The Chinese University of Hong Kong (Hong Kong).;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2013
  • 页码 106 p.
  • 总页数 106
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 11:41:18

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号