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Epitaxial Growth by Monolayer-Restricted Galvanic Displacement

机译:单层限制电流位移的外延生长

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摘要

The development of a new method for epitaxial growth of metals in solution is discussed and illustrated by proof-of-concept results. Cyclic voltammetry and scanning tunneling microscopy are employed to carry out and monitor a quasi-perfect, two-dimensional growth of up to 35 layers of Ag on Au(111) by repetitive galvanic displacement of an underpotentially deposited (UPD) Pb monolayer. The excellent quality of the deposit is manifested by an unchanged Pb UPD voltammetry and ascertained by a flat and uniform surface morphology maintained during the entire growth process. An X-ray photoelectron spectroscopy analysis finds no traces of Pb in the Ag deposit.
机译:概念证明结果讨论并说明了一种新的方法,用于溶液中金属外延生长。循环伏安法和扫描隧道显微镜用于执行和监测通过欠电位沉积(UPD)的Pb单层的重复电化学置换在Au(111)上多达35层Ag的准完美二维生长。沉积物的优良品质通过不变的Pb UPD伏安法来体现,并通过在整个生长过程中保持平坦且均匀的表面形态来确定。 X射线光电子能谱分析发现在Ag沉积物中未发现任何Pb痕迹。

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