首页> 外文期刊>Electrochemical and solid-state letters >Electron Beam Induced Degradation of CaS:Pb Thin Film Phosphor Grown by Atomic Layer Deposition
【24h】

Electron Beam Induced Degradation of CaS:Pb Thin Film Phosphor Grown by Atomic Layer Deposition

机译:原子层沉积生长的电子束诱导的CaS:Pb薄膜磷光体的降解

获取原文
获取原文并翻译 | 示例
           

摘要

The effects of electron (e)-beam irradiation on the luminescent and the materials properties of CaS:Pb films were investigated using structural and compositional analysis techniques. Continuous c-beam irradiation on CaS:Pb thin film for 180 min resulted in an approximately 60 percent decrease of cathodoluminescence (CL) intensity. Transmission electron microscopic analysis indicated that e-beam irradiation induced the precipitation of Pb. The decrease of CL intensity by e-beam irradiation was mostly caused by the decrease of Pb~(2+) luminescent center ion concentration due to the precipitation of Pb. E-beam irradiation also resulted in heavy carbonaceous contamination on the surface. The thickness of the carbonaceous layer was approximately 10 nm.
机译:利用结构和组成分析技术研究了电子束辐照对CaS:Pb薄膜的发光和材料性能的影响。在CaS:Pb薄膜上连续进行c束辐照180分钟,导致阴极发光(CL)强度降低了约60%。透射电子显微镜分析表明,电子束辐照诱导了铅的沉淀。电子束辐照导致的CL强度降低主要是由于Pb的析出导致Pb〜(2+)发光中心离子浓度的降低。电子束辐照还会在表面上造成严重的碳污染。碳质层的厚度为约10nm。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号