The effects of annealing and electron beam irradiation on CaS:Pb thin film phosphor grown by atomic layer deposition

摘要

The effects of annealing and e-beam irradiation on the materials and luminescent properties of CaS:Pb films were investigated using surface and compositional analysis techniques. Rapid thermal annealing at temperatures ranging from 500 to 700℃ induced the segregation of Pb ions from CaS host if there was no capping layer. Electron beam irradiation on CaS:Pb thin film for 60 min resulted in 50% decrease of CL intensity. However, compositional and crystalline analyses did not show any considerable degradation due to e-beam irradiation except the carbonaceous contamination on the thin film phosphor surface accumulated during e-beam irradiation.