机译:缺陷动态特性对高κ栅极器件PBTI的影响研究
Ningbo Univ, Dept Microelect, Fac Sci, Ningbo 315211, Zhejiang, Peoples R China;
Guilin Univ Elect Technol, Sch Comp Sci & Informat Secur, Guangxi 541004, Peoples R China;
Ningbo Univ, Dept Phys, Fac Sci, Ningbo 315211, Zhejiang, Peoples R ChinaFudan Univ, Sch Microelect, Shanghai 200433, Peoples R ChinaSouth Univ Sci & Technol, Mat Characterizat & Preparat Ctr, Shenzhen 518055, Peoples R China;
Positive bias temperature instability; High-kappa dielectrics; V-O-O-i defect pair; Defect level evolution;
机译:Impact of Individual Charged Gate-Oxide Defects on the Entire – Characteristic of Nanoscaled FETs
机译:Comprehensive, in operando, and correlative investigation of defects and their impact on device performance
机译:Investigating the Impact of Self-Heating Effects on some Thermal and Electrical Characteristics of Dielectric Pocket Gate-all-around (DPGAA) MOSFETs
机译:Experimental Investigation of Condensation and Evaporation Heat Transfer Characteristics of R454C in Plate Heat Exchanger
机译:伽玛辐射效果测试的要求:28A003A(REV 0)PMOS电源开关(环境 - 动态)28A004A(REV 0)PMOS电源开关(LN $ SUB 2 $dynamic Test 28a003b(Rev 0)PMOS NOR GATE(环境动态)测试28A004B(REV 0)PMOS NOR GATE(LN $ SUB 2 $ -dynamic)
机译:Nasa Larc Impact Dynamics研究设施的数据采集系统