Raman Spectroscopy of the Damages Induced by Ar-Ion Beam Etching of InSb(100) Surface

摘要

The strong enhancement of forbidden TO mode on Ar ion beam-etched InSb(100) surfaces was examined by Raman spectroscopy. By raising the applied RF power in Ar-ion etching from 50 to 200 W, the integrated area ratio of I_(TO)/I_(LO) increased from 0.05 to 0.23 and the full width at half maximum of LO peak increased from 5.46 to 7.46 cm~(-1). Such increases are induced by the partly disordered structure deformed by bombarded Ar ions. Raman spectroscopy could investigate the microscopic damages of the crystalline structure leading to break the Raman selection rules.