Laser Lift-Off Mechanisms of GaN Epi-Layer Grown on Pattern Sapphire Substrate

Chang Tai-Min; Fang Hsin-Kai; Liao Cheng; Hsu Wen-Yang; Wu YewChung Sermon

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Laser Lift-Off Mechanisms of GaN Epi-Layer Grown on Pattern Sapphire Substrate

机译：图案蓝宝石衬底上生长的GaN外延层的激光剥离机理

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Wafer bonding and laser lift-off (LLO) processes were employed to fabricate pattern sapphire thin-GaN light-emitting diodes LEDs (PT-LED). During the LLO process, the required laser energy for PT-LED was much higher than that for flat thin-GaN LED (FT-LED). The yield rate of PT-LED was low, and the leakage current was high. In this study, the laser lift-off mechanisms of PT-LEDs were investigated. (C) The Author(s) 2014. Published by ECS. All rights reserved.

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《ECS Journal of Solid State Science and Technology》 |2015年第2期|共3页
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Chang Tai-Min; Fang Hsin-Kai; Liao Cheng; Hsu Wen-Yang; Wu YewChung Sermon;
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中图分类电化学工业;
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1. Laser Lift-Off Mechanisms of GaN Epi-Layer Grown on Pattern Sapphire Substrate [J] . Chang Tai-Min, Fang Hsin-Kai, Liao Cheng, ECS Journal of Solid State Science and Technology . 2015,第2期

机译：图案蓝宝石衬底上生长的GaN外延层的激光剥离机理
2. Laser lift-off transfer printing of patterned GaN light-emitting diodes from sapphire to flexible substrates using a Cr/Au laser blocking layer [J] . Jaeyi Chun, Youngkyu Hwang, Yong-Seok Choi Scripta materialia . 2014,第Null期

机译：使用Cr / Au激光阻挡层从蓝宝石到柔性衬底的图案化GaN发光二极管的激光剥离转移印刷
3. GaN-based LEDs with a high light extraction composite surface structure fabricated by a modified YAG laser lift-off technology and the patterned sapphire substrates [J] . Yongjian Sun, Simeon Trieu, Tongjun Yu, Semiconductor science and technology . 2011,第8期

机译：通过改进的YAG激光剥离技术和带图案的蓝宝石衬底制造的具有高光提取复合表面结构的GaN基LED
4. Chemical lift-off of blue light-emitting diodes grown on sapphire substrate with an oxide-patterned sacrificial layer [C] . Chun-Ting Pan, Kun-Ching Shen, Dong-Sing Wuu, Symposium on wide bandgap semiconductor materials and devices;Meeting of the Electrochemical Society . 2012

机译：蓝宝石衬底上生长的具有氧化物图案牺牲层的蓝色发光二极管的化学剥离
5. Study of CMOS compatible ruthenium oxide Schottky contacts for AlGaN/GaN and InAlN/GaN diodes and high mobility transistors grown on silicon (111) substrates. [D] . Kyaw, Lwin Min. 2015

机译：用于AlGaN / GaN和InAlN / GaN二极管以及在硅（111）衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
6. Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate [O] . YewChung Sermon Wu, A. Panimaya Selvi Isabel, Jian-Hsuan Zheng, 2015

机译：凹图案蓝宝石衬底上生长的GaN基LED的晶体质量和光输出功率
7. Thermo-mechanical solution of film/substrate systems under local thermal load and application to laser lift-off of GaN/sapphire structures [O] . Wang M.Q., Wang Y., Sun Y.J., 2012

机译：局部热负荷下薄膜/衬底系统的热机械解决方案及其在GaN /蓝宝石结构的激光剥离中的应用

Laser Lift-Off Mechanisms of GaN Epi-Layer Grown on Pattern Sapphire Substrate

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