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首页> 外文期刊>ECS Journal of Solid State Science and Technology >A View on Annealing Behavior of Cu-Filled Through-Silicon Vias (TSV)
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A View on Annealing Behavior of Cu-Filled Through-Silicon Vias (TSV)

机译:铜填充硅通孔(TSV)退火行为的观点

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In this article, based on analyzing the effect of self-annealing of copper film both empirically and numerically, a new hypothesis has been proposed to better explain the mechanism of copper protrusion evolution with annealing temperature. Electroplated copper in TSV goes through an intense self-annealing process after deposition at room temperature. The effect of self-annealing, which has been all ignored to date, is critical to the annealing behavior of Cu-filled TSV. During self-annealing, a tensile stress field is generated in TSV due to the occurrence of the initial copper protrusion, and this tensile stress can strongly suppress the copper protrusion during annealing treatment. Atomic Force Microscope (AFM) has been used for the measurements of copper protrusion. A finite element model based on the hot deformation and self-annealing of copper film has been proposed to confirm the hypothesis. (C) 2016 The Electrochemical Society. All rights reserved.
机译:本文在经验和数值分析铜膜自退火效果的基础上,提出了一个新的假设,以更好地解释铜退火过程中铜突起的演化机理。在室温下沉积后,TSV中的电镀铜会经历严格的自退火过程。迄今为止,自退火的影响一直被忽略,这对于填充铜的TSV的退火行为至关重要。在自退火期间,由于初始铜突起的出现,在TSV中产生拉伸应力场,并且该拉伸应力可以强烈地抑制退火处理期间的铜突起。原子力显微镜(AFM)已用于测量铜突起。提出了基于铜膜热变形和自退火的有限元模型,以证实这一假设。 (C)2016年电化学学会。版权所有。

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