The Role of Growth-Pressure on the Determination of Anisotropy Properties in Nonpolar m-Plane GaN

摘要

This study reports the role of growth-pressure on the determination of anisotropy properties in nonpolar m-plane GaN. In the high-pressure-growth samples, unrelieved lattice misfit strain lead to larger anisotropic in-plane strains, a striated surface, lower densities of basal-plane stacking faults (BSF) and prismatic stacking faults (PSF), and a smaller anisotropic polarization. In contrast, the low-pressure-growth sample shows the opposite trend. It is suggested that the growth pressure determines the degree of relaxation of lattice misfit strain, which in turn affects the anisotropic in-plane strains, striation feature, densities of BSF and PSF, and degree of polarization. The research results can be used to optimize the growth of nonpolar m-plane GaN.